[1] Morin F J. Oxide which show a metaltoinsulator transition at the neel temperature[J]. Phys Review Letter, 1959, 3:3436.
[2]Jin P, Yoshimura K, Tanemura S. Dependence of microstructure and thermochromism on substrate temperature for sputterdeposited VO2 epitxial film[J]. J Vacuum Sci Technol A, Vacuum Suf Films, 1997, 15(3):11131117.
[3]Jin P, Nakao S, Tanemura S. Tungsten doping into vanadium dioxide thermochromic films by highenergy ion implantation and thermal annealing[J]. Thin Solid Films, 1998, 324(12):151158.
[4]卢勇,林理彬,邹萍,等. 价态和结构对VO2薄膜热致相变光电性能的影响[J].人工晶体学报, 2001,30 (2):185191.
[5]Stanley A Lawton, Edward A Theby. Effect of tungsten and molybdenum doping on the semiconductormetallic transition in vanadium dioxide produce by evaporation decomposition of solution and hydrogen reduction[J]. J Am Ceram Soc, 1995, 78(1):238240.
[6]Burkhardt W, Christmann T, Franke S, et al. Tungsten and fluorine codoping of films[J]. Thin Solid Films, 2002, 402:226231.
[7]魏劲松. V2O5的还原机理与VO2薄膜制备技术[D].西安:西安理工大学材料科学与工程学院, 2001.
[8]Xu Shiqing, Ma Hongping, Dai Shixun, et al. Switching properties and phase transition mechanism of Mo6+doped vanadium dioxide thin film[J]. Chin Phys Lett, 2003, 20(1):148150.
[9]徐时清,赵康,马红萍,等.掺杂VO2薄膜的相变机理和光电特性研究[J]. 人工晶体学报, 2002,31(5):472477.
[10]DooHyeb Youn, HyunTak Kim, ByungGue Chae, et al. Phase and structural characterization of vanadium oxide films grown on amorphous SiO2/Si substrates[J]. J Vac Sci Technol A, 2004, 22(3):719724.
[11]刘向,崔敬忠,梁耀延,等.掺钨二氧化钒薄膜的制备与分析[J].真空与低温.2004, 10(2):8588.
[1]熊礼威,汪建华*,满卫东,等.基片温度对金刚石厚膜生长的影响[J].武汉工程大学学报,2008,(01):83.
XIONG Li wei,WANG Jian hua,MAN Wei dong,et al.Study on the influence of growth temperature on the deposition of diamond thick films by MPCVD[J].Journal of Wuhan Institute of Technology,2008,(01):83.
[2]张文波,王升高,徐开伟,等.金红石TiO2CNTs粉体的制备及光催化性能[J].武汉工程大学学报,2011,(10):54.
ZHANG Wen bo,WANG Sheng gao,XU Kai wei,et al.Research on preparation and photocatalytic of rutile TiO2CNTscomposite powder[J].Journal of Wuhan Institute of Technology,2011,(01):54.
[3]江川,汪建华,熊礼威,等.基片温度对纳米金刚石薄膜制备的影响[J].武汉工程大学学报,2012,(4):39.
JIANG Chuan,WANG Jian\|hua,XIONG Li\|wei,et al.Influence of substrate temperature on preparation of nano\|crystalline diamond films[J].Journal of Wuhan Institute of Technology,2012,(01):39.
[4]汪建华,徐尧,高建保,等.常压微波等离子体微波功率对硫化氢分解效率的影响[J].武汉工程大学学报,2013,(03):34.[doi:103969/jissn16742869201303007]
WANG Jian hua,XU Yao,GAO Jian bao,et al.Influence of microwave power on decomposition of hydrogen sulfide by atmospheric microwave plasma[J].Journal of Wuhan Institute of Technology,2013,(01):34.[doi:103969/jissn16742869201303007]
[5]汪建华,刘聪,熊礼威.辅助气体对分阶段制备金刚石膜的影响[J].武汉工程大学学报,2014,(07):24.[doi:103969/jissn16742869201407005]
WANG Jian hua,LIU Cong,XIONG Li wei.Influence of auxiliary gas on stage growth of diamond films[J].Journal of Wuhan Institute of Technology,2014,(01):24.[doi:103969/jissn16742869201407005]
[6]黄 平,汪建华*,刘 繁,等.微波法制备单晶金刚石的研究进展[J].武汉工程大学学报,2016,38(4):350.[doi:10. 3969/j. issn. 1674?2869. 2016. 04. 009]
HUANG Ping,WANG Jianhua*,LIU Fan,et al.Research Progress in Preparation of Mono-Crystal Diamond by Microwave Method[J].Journal of Wuhan Institute of Technology,2016,38(01):350.[doi:10. 3969/j. issn. 1674?2869. 2016. 04. 009]
[7]杜 凯,黎振坤,刘 繁*,等.单晶金刚石生长过程中的应力研究[J].武汉工程大学学报,2020,42(04):415.[doi:10.19843/j.cnki.CN42-1779/TQ.202003008]
DU Kai,LI Zhenkun,LIU Fan*,et al.Study on Stress of Single Crystal Diamond at Different Growth Stages[J].Journal of Wuhan Institute of Technology,2020,42(01):415.[doi:10.19843/j.cnki.CN42-1779/TQ.202003008]