|本期目录/Table of Contents|

[1]陈金民,黄志良*,刘羽,等.微波等离子体制备氮杂二氧化钨钒薄膜[J].武汉工程大学学报,2008,(01):44-47.
 CHEN Jin min,HUANG Zhi liang,LIU Yu,et al.V0.98W0.02O2-xNy thin films synthesized by microwave plasma[J].Journal of Wuhan Institute of Technology,2008,(01):44-47.
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2008年01期
页码:
44-47
栏目:
材料科学与工程
出版日期:
2008-01-30

文章信息/Info

Title:
V0.98W0.02O2-xNy thin films synthesized by microwave plasma
文章编号:
10044736(2008)01004404
作者:
陈金民黄志良*刘羽王升高
武汉工程大学湖北省等离子体重点实验室,湖北 武汉 430074
Author(s):
CHEN Jinmin HUANG Zhiliang LIU Yu WANG Shenggao
Hubei Province Key Laboratory of Plasma Chemistry and Advanced Materials,
Wuhan Institute of Technology, Wuhan 430074, China
关键词:
微波等离子体氮杂V0.98W0.02O2-xNy相变温度薄膜
Keywords:
microwave plasma nitrogen doped V0.98W0.02O2-xNy phase transition temperature thin film
分类号:
O 484;TB 43
DOI:
-
文献标志码:
A
摘要:
根据二氧化钒在68 ℃附近发生相变的这一特性,选用V2O5和W2O3为前驱物,通过在玻璃片上镀膜,采用微波等离子体增强法,合成了氮杂二氧化钨钒(V0.98W0.02O2-xNy)薄膜.通过XRD表征了样品的组成,用自制的仪器测量了合成样品的相变温度,结果表明:样品为氮杂二氧化钨钒(V0.98W0.02O2-xNy),通过氮掺杂能有效降低二氧化钨钒薄膜的相变温度,相变温度最低可以降至35 ℃.
Abstract:
According to the character of VO2 which will take phase transition temperature under certain temperature near 68℃, V0.98W0.02O2-xNy thin films synthesized by microwave plasma enhanced route using V2O5 and W2O3 as molecular precursors through coating film in glass slice. The components of yielded samples are characterized by XRD, phase transition temperature of yielded samples are measured by homemade instrument. The results show that the samples were V0.98W0.02O2-xNy and phase transition temperature of V0.98W0.02O2-xNy thin films can fall in effect by nitrogen doping; the lowest phase transition temperature can fall to 35 ℃.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:20060719
基金项目:湖北省自然科学基金(2005ABA024)
作者简介:陈金民(1981),男,福建莆田人,硕士研究生.研究方向: 功能材料.
*通讯联系人.
黄志良,男,博士,教授,硕士生导师.研究方向:功能材料.
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