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[1]汪建华,谢杰,熊礼威.氧化钐掺杂对氧化锌压敏陶瓷电学特性的影响[J].武汉工程大学学报,2013,(05):52-56.[doi:103969/jissn16742869201305011]
 WANG Jian hua,XIE Jie,XIONG Li wei.Effect of samarium oxide doping on electrical properties of zinc oxide varistor ceramics[J].Journal of Wuhan Institute of Technology,2013,(05):52-56.[doi:103969/jissn16742869201305011]
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氧化钐掺杂对氧化锌压敏陶瓷电学特性的影响(/HTML)
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2013年05期
页码:
52-56
栏目:
资源与土木工程
出版日期:
2013-05-31

文章信息/Info

Title:
Effect of samarium oxide doping on electrical properties of zinc oxide varistor ceramics
文章编号:
16742869(2013)05005205
作者:
汪建华谢杰熊礼威
武汉工程大学材料科学与工程学院,湖北省等离子体化学与新材料重点实验室,湖北 武汉 430074
Author(s):
WANG Jianhua XIE Jie XIONG Liwei
School of Materials Science and Engineering, Wuhan Institute of Technology, Provincial Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan 430074, China
关键词:
氧化锌氧化镨系压敏陶瓷氧化钐 非线性系数
Keywords:
zinc oxidepraseodymium oxide varistorsamarium oxide nonlinear coefficient
分类号:
TQ174
DOI:
103969/jissn16742869201305011
文献标志码:
A
摘要:
以氧化锌、氧化镨、氧化亚钴、氧化铬和氧化钐作为原料,经配料、球磨、造粒、压片和烧结等工序制得压敏电阻片,采用电流电压特性测试、X射线衍射和扫描电子显微镜分别获得陶瓷的电性能参数,材料成分和微观结构图.实验结果表明:随着氧化钐含量的增加,氧化锌压敏陶瓷的非线性和压敏电压呈现先增大后降低的趋势.当氧化钐摩尔百分比低于0.3时,非线性系数和压敏电压随氧化钐含量的增加而增大.而氧化钐摩尔分数为0.3%时,压敏陶瓷具有最佳非线性电学特性,非线性系数为35,压敏电压为435伏/毫米;继续增加氧化钐至摩尔分数为0.5%时,非线性系数和压敏电压将会降低.氧化钐绝大多数聚集在晶界层,抑制晶粒生长,从而提高了压敏陶瓷的压敏电压.而极少数氧化钐与氧化锌发生置换反应,降低了氧化锌颗粒的电阻,从而提高了非线性.因此氧化锌压敏陶瓷因掺杂氧化钐提高了电性能而有望应用在高压领域.
Abstract:
Zinc oxide, praseodymium oxide, cobaltous oxide, chromium oxide and samarium oxide were used as raw material, and zinc oxide varistor ceramics were prepared through the process of ingredient, milling, granulating, pressing and sintering. Microstructures, electrical parameters and material composition were examined by scanning electron microscopy (SEM), Xray diffractometry (XRD) and IV characteristics test respectively. The results show that the nonlinear coefficient and breakdown voltage increases at first and then deceases with samarium oxide added, when the doping level of samarium oxide is no more than 0.3 mol%, nonlinear coefficient and breakdown voltage of varistor ceramics increase; the varistor ceramics exhibit the optimum nonlinear electrical characteristics at the content 0.3 mol% of samarium oxide: the nonlinear coefficient of is 35, breakdown voltage is 435 V/mm; with the doping level of samarium oxide is more than 0.5 mol%, the nonlinear coefficient and breakdown voltage decreases. Most of samarium oxide are isolated to grain boundaries to inhibit grain growth and improve the varistor voltage. The nonlinear coefficient is enhanced after solid solution reaction occurres between a handful of samarium oxide and zinc oxide which reduces the resistance of zinc oxide particles. Therefore, zinc oxide varistor ceramics is hopeful to be applied in the field of highvoltage because its electricity property is enhanced by samarium oxidedoped.

参考文献/References:

[1]巫欣欣,张剑平,施利毅,等.稀土掺杂氧化锌压敏瓷的研究进展\[J\]. 电瓷避雷器,2009,2(1):2226.WU Xinxin,ZHANG Jianping,SHI Liyi,et al. Research Progress of Rear Earth Doped ZnObased Varistor Ceramics\[J\].Insulators and Surge Arresters,2009,2(1):2226.(in Chinese)[2]赵鸣,郭巍,谢敏,等.ZnOPr6O11基压敏电阻的研究进展\[J\]. 材料导报, 2010,24(15): 2628.ZHAO Ming,GUO Wei,XIE Min,et al. Research Progress of ZnOPr6O11 Based Varistors\[J\].Materials Review, 2010,24(15): 2628.(in Chinese)[3]Nahm C W. Electrical properties and stability of Dy2O3doped ZnOPr6O11based varistor ceramics\[J\]. Journal of Material Science, 2006,41(20): 68226829.[4]Hai Feng. Effect of SnO2 doping on microstructural and electrical properties of ZnOPr6O11 based varistor ceramics\[J\]. Journal of Alloys and Compounds, 2011, 509: 71757180.[5]Peng Zhijian.Influence of Fe2O3 doping on micro\|structural and electrical properties of ZnOPr6O11 based varistor ceramic materials\[J\]. Journal of Alloys and Compounds, 2010, 508: 494499.[6]Miguel Angel Ramírez. Microstructural and Nono\|hmic Properties of ZnOPr6O11CoO Polycrystalline System\[J\]. Materials Research,2010, 13(1): 2934.[7]Nahm C W. Microstructure and electrical properties of Dy2O3doped ZnOPr6O11based varistor ceramics\[J\].Materials Letters, 2004, 58: 22522255.[8]Ashraf M A, Bhuiyan A H. Microstructure and ele\|ctrical properties of Sm2O3 doped Bi2O3based ZnO varistor ceramics\[J\]. Materials Science and Engineering B, 2011, 176: 855860.[9]Hng H H, Knowles K M. Microstructure and currentvoltage characteristics of praseodymiumdoped zinc oxide varistors containing MnO2, Sb2O3 and Co3O4\[J\].JOURNAL OF MATERIALS SCIENCE,2002, 37 (6): 11431154.[10]刘振华,何军辉,刘宝琴,等.钐掺杂氧化锌陶瓷的晶体结构和电磁特性\[J\],扬州大学学报:自然科学版,2011,14(2):3034.LIU Zhenhua,HE Junhui,LIU Baoqin,et al.Structure and electromagnetic character of Smdoped ZnO ceramic\[J\].Journal of Yangzhou University(Natural Science Edition), 2011,14(2):3034.(in Chinese)[11]王振林,李盛涛. 氧化锌压敏陶瓷制造及应用\[M\].北京:科学出版社,2009:260162.[12]Xu Dong. Microstructure and electrical properties of Lu2O3doped ZnOBi2O3based varistor ceramics\[J\].Trans Nonferrous Met Soc, 2010, 20: 23032308.[13]ChoonWoo Nahm. Nonlinear currentvoltage prop\|erties and accelerated aging behavior of ZPCCLbased varistors with sintering temperature\[J\]. Material Letters, 2007, 61: 49504953.[14]ChoonWoo Mahm. Microstructure, electrical prop\|erties, and aging behavior of ZnOPr6O11CoOCr2O3Y2O3Er2O3 varistor ceramics\[J\]. Ceramics International,2011, 37: 30493054.

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备注/Memo

备注/Memo:
收稿日期:20130308基金项目:武汉工程大学研究生创新基金(CX201138);国家自然科学基金项目(11175137 );湖北省教育厅科学技术研究项目(Q20121501)作者简介:汪建华(1955),男,湖北武汉人,教授,博士.研究方向:等离子体技术及应用研究.第35卷第5期2013年05月武汉工程大学学报JWuhanInstTechVol35No5May2013
更新日期/Last Update: 2013-06-04