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[1]陶雪华,夏述平,崔　宇,等.硫粉气化温度对制备WS2薄膜的影响[J].武汉工程大学学报,2021,43(02):187-191.[doi:10.19843/j.cnki.CN42-1779/TQ.202011023]
　TAO Xuehua,XIA Shuping,CUI Yu,et al.Effect of Gasification Temperature of Sulfur Powder on Preparation of Tungsten Disulfide Thin Films[J].Journal of Wuhan Institute of Technology,2021,43(02):187-191.[doi:10.19843/j.cnki.CN42-1779/TQ.202011023]
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硫粉气化温度对制备WS2薄膜的影响(/HTML)
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
43
期数:
2021年02期
页码:
187-191
栏目:
材料科学与工程
出版日期:
2021-04-30

文章信息/Info

Title:
Effect of Gasification Temperature of Sulfur Powder on Preparation of Tungsten Disulfide Thin Films
文章编号:
1674 -2869（2021）02 -0187 -05
作者:
陶雪华; 夏述平; 崔　宇; 邱云帆; 熊礼威*
等离子体化学与新材料湖北省重点实验室（武汉工程大学），湖北 武汉 430205
Author(s):
TAO Xuehua; XIA Shuping; CUI Yu; QIU Yunfan; XIONG Liwei*
Hubei Key Laboratory of Plasma Chemical and Advanced Materials（Wuhan Institute of Technology），Wuhan 430205，China
关键词:
WS2薄膜; 表面形貌; 熔融盐; 化学气相沉积; 气化温度
Keywords:
WS2 thin film; surface topography; molten salt; chemical vapor deposition; gasification temperature
分类号:
O484
DOI:
10.19843/j.cnki.CN42-1779/TQ.202011023
文献标志码:
A
摘要:
采用熔融盐辅助化学气相沉积（CVD）法在蓝宝石（Al2O3）衬底上制备WS2薄膜，改变硫粉的气化温度（750~800 ℃），探寻其对WS2薄膜生长的影响，为制备出大面积WS2薄膜提供理论依据。采用光学显微镜、扫描电子显微镜（SEM）和拉曼（Raman）光谱对WS2薄膜的形貌、结晶性和厚度进行分析。800 ℃时，WS2薄膜平均边长可达310 μm，Raman特征峰的波数差为64.60 cm-1（单层）。随着硫粉气化温度的升高，WS2薄膜的生长经历了形貌及尺寸的转变，这表明在沉积过程中，硫粉引入时机对WS2薄膜的形核、生长至关重要，适当的气化温度可以制备出尺寸较大、结晶性能良好的WS2薄膜。
Abstract:
Tungsten disulfide （WS2） thin films were prepared by melting salt-assisted chemical vapor deposition （CVD） method on sapphire （Al2O3） substrate. To provide theoretical basis for the preparation of large-size WS2 thin films，the gasification temperatures of sulfur powder were changed in the range of 750-800 ℃ to investigate their effects on the growth of WS2 thin films. The morphology，crystallinity and thickness of WS2 thin films were analyzed by optical microscope，scanning electron microscopy and Raman spectrometry，respectively. At 800 ℃，the average side length of WS2 thin film is 310 μm，and the wave number difference of Raman characteristic peak is 64.60 cm-1（monolayer）. With the increase of the gasification temperature of sulfur powder，the WS2 thin films change in morphology and size，indicating that the timing of sulfur involved in the deposition process is crucial for the nucleation and growth of WS2 crystals. Large-size WS2 thin films with good crystallization performance can be prepared at appropriate gasification temperatures.

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备注/Memo

备注/Memo:
收稿日期：2020-11-17基金项目：湖北省教育厅重点项目（D20191503）；武汉工程大学科学基金（K201801）；武汉工程大学第十二届研究生教育创新基金（CX2020136）作者简介：陶雪华，硕士研究生。E-mail：[email protected]*通讯作者：熊礼威，博士，副教授。E-mail：[email protected]引文格式：陶雪华，夏述平，崔宇，等. 硫粉气化温度对制备WS2薄膜的影响［J］. 武汉工程大学学报，2021，43（2）：187-191.
更新日期/Last Update: 2021-04-26